A semiconductor memory device comprising a pseudo ground voltage pad and a method of making the semiconductor device are disclosed. The semiconductor memory device comprises a plurality of pads that are respectively adjacent to one another in a first direction. The plurality of pads comprises a plurality of ground voltage pads and a plurality of data pads. The semiconductor memory device further comprises a first peripheral circuit ground line disposed adjacent to the pads and extending in the first direction, and an insulating layer formed on a portion of a first region of the semiconductor memory device comprising the plurality of pads and at least a portion of the first peripheral ground circuit line, wherein a region of the first peripheral circuit ground line is exposed to define a pseudo ground voltage pad, and the pseudo ground voltage pad is adjacent to one of the data pads.