A semiconductor device comprises a substrate, a first conductive film, a first insulation film, a second insulation film, a second conductive film, and a third conductive film. The first conductive film is formed on the substrate. The first insulation film is formed on the first conductive film and has a first opening. The first opening is formed as having multiple crossing trenches each having a predetermined width. The second insulation film is formed on the sides and bottom of the first opening. The second conductive film is formed on the second insulation film in the interior of the first opening. The third conductive film is formed on the second insulation film and the second conductive film.