An embodiment of a semiconductor device includes a gate electrode overlying a substrate and a lightly doped epitaxial layer formed on the substrate. A high energy implant region forms a well in a source side of the lightly doped epitaxial layer. A self-aligned halo implant region is formed on a source side of the device and within the high energy well implant. An implant region on a drain side of the lightly doped epitaxial layer forms a gate overlapped LDD (GOLD). A doped region within the halo implant region forms a source. A doped region within the gate overlapped LDD (GOLD) forms a drain.