A nonvolatile semiconductor memory device includes a semiconductor
substrate, a first floating gate formed on a main surface of the
semiconductor substrate, a second floating gate formed on the main
surface of the semiconductor substrate, a first control gate formed on
the first floating gate, a second control gate formed on the second
floating gate, an interlayer insulating film, and a gap formed in the
interlayer insulating film in at least a portion located between the
first and second floating gates. Accordingly, a nonvolatile semiconductor
memory device for which variations in threshold voltage of a memory cell
can be suppressed and an appropriate read operation can be carried out,
as well as a method of manufacturing the nonvolatile semiconductor memory
device are provided. Further, a capacitance formed between interconnect
lines can be reduced and the drive speed can be improved.