A nonvolatile memory is provided. The memory includes a select transistor
and a trench transistor. The select transistor is formed on the
substrate. The select transistor includes a first gate formed on the
substrate and first and second source/drain regions formed in the
substrate next to the first gate. The trench transistor is formed in the
substrate. The trench transistor includes a second gate formed in the
trench of substrate, an electron trapping layer formed between the second
gate and the trench and second and third source/drain regions formed in
the substrate next to the second gate. The select transistor and the
trench transistor share the second source/drain region.