A method for fabricating a semiconductor device comprises the steps of: forming interconnection grooves 38 in an inter-layer insulation film 34; forming an interconnection layer 44 of Cu as the main material in the interconnection grooves 38; and concurrently injecting nitrogen gas and water to the surface of the interconnection layer 44 buried in the interconnection groove 38.

 
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< Sloped vias in a substrate, spring-like contacts, and methods of making

> Self-aligning patterning method

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