Methods for forming vias are disclosed. The methods include providing a
substrate having a first surface and an opposing, second surface. The
vias are formed within the substrate to have a longitudinal axis sloped
at an angle with respect to a reference line extending perpendicular to
the first surface and the second surface of the substrate. The vias may
be formed from the first surface to the opposing second surface, or the
via may be formed as a first blind opening from the first surface, then a
second opening may be formed from the second surface to be aligned with
the first opening. Vias may be formed completely through a first
substrate and a second substrate, and the substrates may be bonded
together. Semiconductor devices including the vias of the present
invention are also disclosed. A method of forming spring-like contacts is
also disclosed.