A method of forming a magnetic tunnel junction memory element and the resulting
structure are disclosed. A magnetic tunnel junction memory element comprising a
thick nonmagnetic layer between two ferromagnetic layers. The thick nonmagnetic
layer has an opening in which a thinner tunnel barrier layer is disposed. The resistance
of a magnetic tunnel junction memory element may be controlled by adjusting the
surface area and/or thickness of the tunnel barrier layer without regard to the
surface area of the ferromagnetic layers.
