A semiconductor device embodiment may include a plurality of cells each including
a transistor therein, the cells also each including a first capacitor electrode
therein, the first capacitor electrodes being positioned on an insulating layer,
the first capacitor electrodes in adjacent cells being separated from each other.
The device may also include partitioning members on the insulation layer, wherein
the partitioning members are positioned to separate the cells from one another,
and the partitioning members include an upper surface thereon. The device also
may include an organic layer on the first capacitor electrodes between the partitioning
members, wherein the organic layer is not positioned in contact with the upper
surface of the partitioning members. The device may also include a continuous second
capacitor electrode on the organic layer, the second capacitor electrode layer
formed to be a common electrode for cells. In another aspect, the organic layer
may be capable of a polarization inversion by exposure to an electric field. In
another aspect, the partitioning members may include first and second layers, the
first layer being formed from a material having an affinity for an organic solution
used to form the organic layer, the second layer being formed from a material having
a non-affinity for the organic solution used to form the organic layer.
