An improved semiconductor wafer processing apparatus 10 includes a series
of processing stations combined in one form, coupled together by
computer-controlled cluster tooling. Wafers are supplied in a pod to an
input station 28 which initiates a data record for recording processing
results at each station. A sacrificial film 140 is applied to the surface
135 of each wafer. Individual wafers are transferred to a
computer-controlled defect-mapping station 14 where particulate defects
130 are identified and their position coordinates recorded. Defect-mapped
wafers are transferred to a computer-controlled laser area cleaning
station 11 which lifts the defects and sweeps the wafer surface clean,
except for stubborn defects. Clean wafers are transferred to a final
mapping station 20 or 22, followed by transfer of the wafers to an output
station 30. Wafers having remaining stubborn defects are transferred to a
second defect-mapping station 16 where stubborn defects are located by
coordinates, after which the wafers are transferred to a defect review
tool incorporating a scanning electron microscope (SEM-DRT) 24. A SEM
image review of stubborn defects includes chemical analysis of the
stubborn defects. A laser point-cleaning station 13 lifts and sweeps each
stubborn defect individually from the wafer surface. Cleaned wafers are
transferred to a third defect-mapping station 18 for recording any
stubborn defects remaining, then to a second laser area cleaning station
12 for a final cleaning, followed by transfer of the wafers to a final
mapping station 20 or 22 for mapping of any remaining stubborn defects.
The accompanying data records are updated followed by transfer of the
wafers to an output station 30.
