Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets

   
   

The invention includes a sputtering target containing copper of a purity of at least about 99.999 wt. %, and at least one component selected from the group consisting of Ag, Sn, Te, In, B, Bi, Sb, and P dispersed within the copper. The total of Ag, Sn, Te, In, B, Bi, Sb, and P within the copper is from at least 0.3 ppm to about 10 ppm. The sputtering target has a substantially uniform grain size of less than or equal to about 50 micrometers throughout the copper and the at least one component.

Вымысел вклюает цель sputtering содержа медь очищенности по крайней мере около 99.999 wt %, и по крайней мере один компонент выбранный от группы consist of ag, sn, Te, внутри, б, bi, sb, и п разметанный внутри медь. Итог ag, sn, Te, внутри, б, bi, sb, и п внутри медь от по крайней мере 0.3 ppm до около 10 ppm. Цель sputtering имеет существенн равномерный размер зерна less than or equal to около 50 микрометров повсеместно в медь и по крайней мере один компонент.

 
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