Vertical transistor comprising a mobile gate and a method for the production thereof

   
   

What is proposed is a vertical field effect transistor produced from a semiconductor wafer, comprising a residual transistor composed of a source zone, a channel zone and a drain zone, as well as a movable gate structure disposed by means of at least one flexible suspension in front of said channel zone and spaced therefrom, which is characterized by the provision that the movable gate structure consists of the material of said semiconductor wafer. The suspensions of the movable structure preferably present a high ratio of their height to their width, such that the movable gate may preferably move in the wafer plane.

Ce qui est proposé est un transistor à effet de champ vertical produit à partir d'une gaufrette de semi-conducteur, comportant un transistor résiduel composé de zone de source, de zone de canal et de zone de drain, comme une structure mobile de porte disposée au moyen d'au moins une suspension flexible devant ladite zone de canal et espacée de là, qui est caractérisée par la disposition que la structure mobile de porte comprend le matériel de ladite gaufrette de semi-conducteur. Les suspensions de la structure mobile présentent de préférence un rapport élevé de leur taille à leur largeur, telle que la porte mobile peut de préférence se déplacer dans l'avion de gaufrette.

 
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