A non-volatile memory device comprises an active region disposed in a
predetermined region of a semiconductor substrate, a selection gate
electrode crossing over the active region, and a floating gate electrode
disposed on the active region parallel to the selection gate electrode and
spaced apart from the selection gate electrode. The non-volatile memory
device further comprises a tunnel insulating layer intervening between the
active region and each of the selection gate electrode and the floating
gate electrode, a separation insulating pattern intervening between the
selection gate electrode and the floating gate electrode, an erasing gate
electrode disposed over the floating gate electrode and crossing over the
active region parallel to the selection gate electrode, and an erasing
gate insulating layer intervening between the erasing gate electrode and
the floating gate electrode. The selection gate electrode is formed
without a photoresist pattern.
