The present invention provides a nitride semiconductor light emitting
device with an active layer of the multiple quantum well structure, in
which the device has an improved luminous intensity and a good
electrostatic withstanding voltage, thereby allowing the expanded
application to various products. The active layer 7 is formed of a
multiple quantum well structure containing In.sub.a Ga.sub.1-a N
(0.ltoreq.a<1). The p-cladding layer 8 is formed on said active layer
containing the p-type impurity. The p-cladding layer 8 is made of a
multi-film layer including a first nitride semiconductor film containing
Al and a second nitride semiconductor film having a composition different
from that of said first nitride semiconductor film. Alternatively, the
p-cladding layer 8 is made of single-layered layer made of Al.sub.b
Ga.sub.1-b N (0.ltoreq.b.ltoreq.1). A low-doped layer 9 is grown on the
p-cladding layer 8 having a p-type impurity concentration lower than that
of the p-cladding layer 8. A p-contact layer is grown on the low-doped
layer 9 having a p-type impurity concentration higher than those of the
p-cladding layer 8 and the low-doped layer 9.
