A III-nitride light emitting device including a substrate, a first
conductivity type layer overlying the substrate, a spacer layer overlying
the first conductivity type layer, an active region overlying the spacer
layer, a cap layer overlying the active region, and a second conductivity
type layer overlying the cap layer is disclosed. The active region
includes a quantum well layer and a barrier layer containing indium. The
barrier layer may be doped with a dopant of first conductivity type and
may have an indium composition between 1% and 15%. In some embodiments,
the light emitting device includes an InGaN lower confinement layer formed
between the first conductivity type layer and the active region. In some
embodiments, the light emitting device includes an InGaN upper confinement
layer formed between the second conductivity type layer and the active
region. In some embodiments, the light emitting device includes an InGaN
cap layer formed between the upper confinement layer and the active
region.
