A semiconductor device that can prevent short-circuit occurring between
capacitor electrodes and a method of manufacturing the semiconductor
device are obtained. A semiconductor includes two capacitor electrodes
formed spaced from each other and including conductive impurities of the
first conductivity type, and an electrode isolation film located between
the two capacitor electrodes and formed at the same layer as that of the
two capacitor electrodes, while including conductive impurities of the
second conductivity type different from the first conductivity type. This
allows the two capacitor electrodes to be electrically isolated from each
other, without the etching step or the like, by introducing conductive
impurities of the second conductivity type into a region that is located
between the two capacitor electrodes and is formed at the same layer as
that of the capacitor electrodes.
