Capacitor structure

   
   

The present invention is directed to fabrication of a capacitor formed with a substantially concave shape and having optional folded or convoluted surfaces. The concave shape optimizes surface area within a small volume and thereby enables the capacitor to hold a significant charge so as to assist in increased miniaturization efforts in the microelectronic field. The capacitor is fabricated in microelectronic fashion consistent with a dense DRAM array. Methods of fabrication include stack building with storage nodes that extend above a semiconductor substrate surface.

La actual invención se dirige a la fabricación de un condensador formado con una forma substancialmente cóncava y tener superficies dobladas o enrolladas opcionales. La forma cóncava optimiza el área superficial dentro de un volumen pequeño y de tal modo permite al condensador llevar a cabo una carga significativa para asistir a esfuerzos crecientes de la miniaturización en el campo microelectrónico. El condensador se fabrica en la manera microelectrónica constante con un arsenal denso de la COPITA. Los métodos de fabricación incluyen el edificio del apilado con los nodos del almacenaje que extienden sobre una superficie del substrato del semiconductor.

 
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> Semiconductor element and semiconductor memory device using the same

> Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same

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