Disclosed are a method and apparatus for inspecting a wafer for electrical
defects. A first electron beam is irradiated onto an area of the wafer
including an inspection region to charge the area. A second electron beam
is irradiated onto the inspection region to inspect the inspection region
after focusing the second electron beam on the inspection region. A third
electron beam is irradiated onto the area to discharge charges
accumulated on the area. Therefore, the electrical defect of the wafer
can be precisely detected with increased voltage contrasts for
distinguishing the electrical defect. This method and apparatus have
improved detection sensitivity and detection reliability over
conventional methods.