A semiconductor device is made up of a first insulating layer having a
through hole; a first interconnection which comprises a first conductive
layer, a first barrier layer, and a first main interconnection, and a
second interconnection connected to one of the first conductive layer and
the first barrier layer. Accordingly, the semiconductor device can avoid
a problem so that the Cu of the first main interconnection transfers from
a portion connected to the second interconnection due to cause
electromigration, the connected portion becomes a void, and the first
interconnection is disconnected to the second interconnection.