One embodiment of the present invention is a method for making metallic interconnects,
which method is utilized at a stage of processing a substrate having a patterned
insulating layer which includes at least one opening and a field surrounding the
at least one opening, the field and the at least one opening being ready for depositing
of one or more seed layers, which method includes steps of: (a) depositing a substantially
conformal seed layer over the field and inside surfaces of the at least one opening;
(b) depositing a substantially non-conformal seed layer over the substantially
conformal seed layer, said substantially non-conformal seed layer being thicker
than said substantially conformal seed layer over the field, wherein the substantially
conformal and the substantially non-conformal seed layers do not seal the at least
one opening; and (c) electroplating a metallic layer over the substantially non-conformal
seed layer, wherein the electroplated metallic layer comprises a material selected
from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
