A nonvolatile ferroelectric memory device comprising a cell array having a multi-bitline
structure comprises a plurality of cell array blocks, common data buses shared
by the plurality of cell array blocks to transmit data stored in the cell array
blocks, a sense amplifier array which compares a sensing voltage of the data transmitted
through the common data buses with a reference voltage, a reference voltage controller
which adjusts the reference voltage in response to test mode control signal externally
applied thereto, and a column selecting controller which selects the predetermined
number of cell array blocks in response to the test mode control signals and outputs
sensing voltages of the selected cell array blocks to the common data buses at
the same time. Accordingly, the nonvolatile ferroelectric memory device can selectively
test more than two cell array blocks as well as a single cell array block having
a 1T1C structure simultaneously by using just control signals without additionally
modifying an internal circuit.
