Reactive deposition for the formation of chip capacitors

   
   

Methods for the production of ceramic chip capacitors include the deposition of at least two layers of electrical conductor and at least one layer of a dielectric between electrical conducting layers. The compositions in the dielectric layer are deposited from a flow in which flowing reactants react to form particles in a reaction driven by light at a light reaction zone. In some embodiments, a plurality of dielectric layers is deposited. Suitable dielectric materials include barium titanate. A collection of barium titanate particles can be formed in the coating process having an average diameter less than about 90 nanometers. Thus, ceramic chip capacitors can be formed with barium titanate particles having an average diameter less than about 90 nanometers.

 
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