A method for depositing a dielectric layer having a multi-layer structure on a
substrate includes forming an oxidation barrier layer on a surface of a substrate;
forming a plurality of dielectric layers on the oxidation barrier layer, wherein
one of a plurality of additional oxidation barrier layers is disposed between each
of the plurality of dielectric layers and an adjacent dielectric layer. Accordingly,
a capacitor having low leakage current and high capacitance is obtained. In addition,
a dielectric constant is controlled by adjusting a lattice constant so that a multi-layer
structure of high dielectric constant is formed on a large substrate.
