In a method of forming a contact in a semiconductor device, an insulating layer
is formed on the semiconductor substrate. Then, a contact hole is formed by selectively
etching the insulating layer. A barrier metal layer is deposited on side and bottom
surfaces of the contact hole and on a top surface of the insulating layer to a
uniform thickness. A wetting layer of an oxidation-resistive metal material is
deposited on the barrier metal layer. A metal layer is formed on the wetting layer
and fills the contact hole to thereby form a contact in the semiconductor device.
