An MRAM is provided that minimizes the limits in MRAM density imposed by utilization
of an isolation or select device in each memory cell. In addition, methods are
provided for reading an MTJ in a ganged memory cell of the MRAM. The method includes
determining an electrical value that is at least partially associated with a resistance
of a ganged memory cell of the MRAM. The MTJ in the ganged memory cell is toggled
and a second electrical value, which is at least partially associated with the
resistance of the ganged memory cell, is determined after toggling the MTJ. Once
the electrical value prior to the toggling and after the toggling is determined,
the difference between the two electrical values is analyzed to determine the value
of the MTJ.
