The invention includes a stacked magnetic memory structure. The magnetic memory
structure includes a stacked magnetic memory structure. The first layer includes
a first plurality of magnetic tunnel junctions. A second layer is formed adjacent
to the first layer. The second layer includes a second plurality of magnetic tunnel
junctions. The stacked magnetic memory structure further includes a common first
group conductor connected to each of the first plurality of magnetic tunnel junctions
and the second plurality of magnetic tunnel junctions.
