A wafer bonding method of forming silicon-on-insulator comprising integrated
circuitry
includes nitridizing at least a portion of an outer surface of silicon of a device
wafer. After the nitridizing, the device wafer is joined with a handle wafer. A
method of forming silicon-on-insulator comprising integrated circuitry includes
nitridizing an interface of the silicon comprising layer of silicon-on-insulator
circuitry with the insulator layer of the silicon-on-insulator circuitry. After
the nitridizing, a field effect transistor gate is formed operably proximate the
silicon comprising layer. Other methods are disclosed. Integrated circuitry is
contemplated regardless of the method of fabrication.
