A semiconductor device including a silicon substrate, a gate insulator film formed
on the silicon substrate and including silicon, deuterium, and at least one of
oxygen and nitrogen, and a gate electrode formed on the gate insulator film wherein
a deuterium concentration in a vicinity of an interface of the gate insulator film
with the gate electrode is at least 1107 cm-3, and
a deuterium concentration in a vicinity of an interface of the gate insulator film
with the silicon substrate is higher than the deuterium concentration in the vicinity
of the interface of the gate insulation film with the gate electrode.
