A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.

 
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> Atomic layer doping apparatus and method

> Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices

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