A method of forming a memory cell is provided, the method including forming a first pillar-shaped element comprising a first semiconductor material, forming a first mold comprising an opening self-aligned with the first pillar-shaped element, and depositing a second semiconductor material in the opening to form a second pillar-shaped element above the first pillar-shaped element. Other aspects are also provided.

 
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< METHODS FOR INCREASING CARBON NANO-TUBE (CNT) YIELD IN MEMORY DEVICES

> MANAGING MULTIPLE CONCURRENT OPERATIONS WITH VARIOUS PRIORITY LEVELS IN A LOCAL STORAGE DEVICE

> Self-assembly process for memory array

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