A method of forming a thermoelectric device includes extruding a P/N-type
billet to form a P/N-type extrusion having a first plurality of P-type
regions and a first plurality of N-type regions. The P/N-type extrusion
is sliced into a plurality of P/N-type wafers. A diffusion barrier
metallization is applied to at least a subset of the P-type regions and
N-type regions. One side of at least one P/N-type wafer is attached to a
temporary substrate. The P/N-type regions of the P/N-type wafer are
separated into an array of isolated P-type and N-type elements. The array
of elements are coupled to a first plate having a first patterned
metallization to form a thermoelectric circuit. The temporary substrate
and bonding media may be detached from the P-type and N-type elements.
The thermoelectric circuit may be coupled with a second plate at a second
end of the thermoelectric circuit, second plate having a second patterned
metallization.