According to the invention, there is provided a nonvolatile semiconductor memory having: a floating gate electrode formed on a gate insulating film on an element region isolated by an element isolation region on a semiconductor substrate; an inter-gate insulating film formed to cover a portion from an upper surface to a middle of a side surface of the floating gate electrode; and a control gate electrode formed on the floating gate electrode via the inter-gate insulating film, wherein a portion from the upper surface of the floating gate electrode to at least a middle of the portion of the side surface which is covered with the inter-gate insulating film has a tapered shape largely inclined to a direction perpendicular to a surface of the semiconductor substrate, compared to the other portion of the side surface.

 
Web www.patentalert.com

< Terraced film stack

> Semiconductor integrated circuit devices having upper pattern aligned with lower pattern molded by semiconductor substrate and methods of forming the same

> Semiconductor memory devices and methods of forming the same

~ 00547