A substrate processing system has a housing that defines a process
chamber. A substrate holder disposed within the process chamber supports
a substrate during substrate processing. A gas-delivery system introduces
a gas into the process chamber. A pressure-control system maintains a
selected pressure within the process chamber. A high-density plasma
generating system forms a plasma having a density greater than 10.sup.11
ions/cm.sup.3 within the process chamber. A radio-frequency bias system
generates an electrical bias on the substrate at a frequency less than 5
MHz. A controller controls the gas-delivery system, the pressure-control
system, the high-density plasma generating system, and the
radio-frequency bias system.