A memory cell includes a first electrode and a second electrode forming an opening. The opening is defined by a first sidewall, a second sidewall, and a surface extending between the first sidewall and the second sidewall. The memory cell includes phase change material contacting the first electrode and the first sidewall and the second sidewall. The memory cell includes isolation material electrically isolating the phase change material from the surface extending between the first sidewall and the second sidewall.

 
Web www.patentalert.com

< Atomic layer deposition processes for the formation of ruthenium films, and ruthenium precursors useful in such processes

> Aircraft galley carts and associated methods of manufacture

> Nonlinear interferometric vibrational imaging

~ 00530