This invention is directed to processes for the formation of ruthenium-containing films on surfaces in atomic layer deposition (ALD) processes. The ALD process includes depositing a surface-activating group on the surface; exposing the deposit of the surface-activating complex to a ruthenium precursor to form a deposited ruthenium complex on the surface; and reacting the deposited ruthenium complex with a reducing agent to form a ruthenium-containing film on the surface. This invention is also directed to ruthenium complexes, RuL.sub.2L*, that can be used as ruthenium precursors in these processes.