Provided is a method of manufacturing a semiconductor device including the steps of: forming a first insulating film on a silicon substrate; forming a capacitor in which a lower electrode, a capacitor dielectric film configured of ferroelectric material, and an upper electrode are laminated in this order on the first insulating film; forming a silicon nitride film by a catalytic CVD method as a first capacitor protect insulating film covering the capacitor and the first insulating film; and forming a second insulating film on the first capacitor protect insulating film.

 
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> Ferroelectric memory and its manufacturing method

> Polishing slurry, method of treating surface of Ga.sub.xIn.sub.1-xAs.sub.yP.sub.1-y crystal and Ga.sub.xIn.sub.1-xAs.sub.yP.sub.1-y crystal substrate

~ 00507