A ferroelectric memory includes a substrate, an interlayer dielectric layer composed of at least one layer formed above the substrate, a plurality of ferroelectric capacitors formed above the interlayer dielectric layer, a coating layer that covers the plurality of ferroelectric capacitors, a first opening section provided between the plurality of ferroelectric capacitors, a second opening section that is connected to the first opening section and formed in the coating layer and the interlayer dielectric layer, and a conductive layer provided in one piece inside the first opening section and the second opening section.