A PMOS transistor of a semiconductor device exhibiting improved
characteristics, a semiconductor device incorporating the same, and a
method for manufacturing the semiconductor device. The PMOS transistor
incorporates a first gate insulation film formed in a predetermined
region on a semiconductor substrate and comprising a hafnium-based oxide,
a second gate insulation film formed on the first gate insulation film
for shielding reaction between hafnium and silicon, and a gate conductive
film formed on the second gate insulation film and comprising
polysilicon.