A method for making a film stack containing one or more metal-containing
layers and a substrate processing system for forming the film stack on a
substrate are provided. The substrate processing system includes at least
one transfer chamber coupled to at least one load lock chamber, at least
one first physical vapor deposition (PVD) chamber configured to deposit a
first material layer on a substrate, and at least one second PVD chamber
for in-situ deposition of a second material layer over the first material
layer within the same substrate processing system without breaking the
vacuum or taking the substrate out of the substrate processing system to
prevent surface contamination, oxidation, etc. The substrate processing
system is configured to provide high throughput and compact footprint for
in-situ sputtering of different material layers in designated PVD
chambers.