A method for making a film stack containing one or more silicon-containing
layers and one or more metal-containing layers and a substrate processing
system for forming the film stack on a substrate are provided. The
substrate processing system includes one or more transfer chambers
coupled to one or more load lock chambers and two or more different types
of process chambers. The two or more types of process chambers are used
to deposit the one or more silicon-containing layers and the one or more
metal-containing layers in the same substrate processing system without
breaking the vacuum, taking the substrate out of the substrate processing
system to prevent surface contamination, oxidation, etc., such that
additional cleaning or surface treatment steps can be eliminated. The
substrate processing system is configured to provide high throughput and
compact footprint for in-situ substrate processing and carry out
different types of processes.