A semiconductor laser device having a lower cladding layer, an active layer and an upper first cladding layer stacked on a compound semiconductor substrate in this order, a ridge-shaped upper second cladding layer provided on the upper first cladding layer, a current blocking layer provided on both sides of the upper second cladding layer, and a contact layer provided on the upper second cladding layer. A current interrupting layer or layers formed of an insulating material are provided between the upper second cladding layer and the contact layer, in the vicinity of at least one of a laser emission end face and a reflective end face, which are both end faces of the device in the longitudinal direction of the upper second cladding layer.

 
Web www.patentalert.com

< Staggered array coupler

< Edge-emitting type semiconductor laser

> Transmitter array with pixel element that has primary semiconductor laser and at least one secondary semiconductor laser

> Laser output light pulse beam parameter transient correction system

~ 00291