The present invention provides for a tunneling magnetoresistive element and a
method of reading a logical state of the element. An embodiment of the magnetoresistive
element, for example, provides a tri-layer device having a storage layer, a sense
layer and a barrier layer. The storage layer is a conducting, magnetic layer having
a magnetization direction along an easy axis of the element. The storage layer
is configured such that its magnetization direction will invert in response to
an externally applied magnetic field of at least a first threshold strength. The
binary state of the tunneling element is determinable from the magnetization direction
of the storage layer. The sense layer is also a conducting, magnetic layer having
a magnetization direction along the easy axis of the element. The sense layer is
configured such that its magnetization direction will invert in response to an
externally applied magnetic field of at least a second threshold strength. The
sense layer is designed with a lower coercivity than the storage layer, thus the
second threshold strength is less than the first threshold strength.