A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor.

 
Web www.patentalert.com

< Memory cell having a thin insulation collar and memory module

< Method of reducing particulates and enhancing burning rate within a combustion chamber

> Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate

> Process for producing aligned carbon nanotube films
~ 00246