The present invention provides a semiconducting device including at least one
gate region including a gate conductor located on a surface of a substrate, the
substrate having an exposed surface adjacent the gate region; a silicide contact
located adjacent the exposed surface; and a stress inducing liner located on the
silicide contact, the exposed surface of the substrate adjacent to the gate region
and the at least one gate region, wherein the stress inducing liner provides a
stress to a device channel portion of the substrate underlying the gate region.
The stress produced on the device channel is a longitudinal stress on the order
of about 200 MPa to about 2000 MPa. The present invention also provides a method
for forming the above-described semiconducting device.