A process for forming the lower and upper electrodes of a high dielectric constant
capacitor in a semiconductor device from an organoruthenium compound by chemical
vapor deposition. This chemical vapor deposition technique employs an organoruthenium
compound, an oxidizing gas, and a gas (such as argon) which is hardly adsorbed
to the ruthenium surface or a gas (such as ethylene) which is readily adsorbed
to the ruthenium surface. This process efficiently forms a ruthenium film with
good conformality in a semiconductor device.