One embodiment of the present invention provides a system that facilitates measuring
an alignment between a first semiconductor die and a second semiconductor die.
The system provides a plurality of conductive elements on the first semiconductor
die and a plurality of conductive elements on the second semiconductor die. The
plurality of conductive elements on the second semiconductor die have a different
spacing than the plurality of conductive elements on the first semiconductor die,
so that when the plurality of conductive elements on the first semiconductor die
overlap the plurality of conductive elements on the second semiconductor die, a
vernier alignment structure is created between them. The system also provides a
charging mechanism configured to selectively charge each of the plurality of conductive
elements on the first semiconductor die, wherein charging a conductive element
on the first semiconductor die induces a charge in one or more conductive elements
on the second semiconductor die. An amplification mechanism then amplifies the
signals induced in the conductive elements on the second semiconductor die. These
signals can be analyzed to determine the alignment between the first semiconductor
die and the second semiconductor die.
