Each of program cell and memory cells includes a magnetic storage portion of
the same configuration. The program cell further includes a state change portion.
That is, the program cell has the same structure as the memory cell, except that
the state change portion is additionally provided thereto. As such, the program
cell can be provided efficiently, as it can be designed the same as the memory
cell in terms of the magnetic storage portion and others. The state change portion
makes a transition to a fixed state based on an electrical change. Thus, the state
change portion prevents program information from being rewritten by a magnetic
noise or the like, and ensures stable storage of the program information.
