MRAM sensing operations use a word line (80, 82, 84, 86) and a sense
current to detect the state of a bit (70, 72). The bit (70, 72) has
a high resistance or a low resistance state. Using multiple sub bits (30, 32,
34, 36, 38, 40, 42, 44) in each bit (70, 72) increases the difference
between the high resistance and low resistance state in proportion to the number
of sub bits (30, 32, 34, 36, 38, 40, 42, 44) in each bit (70, 72).
Multiple sub bits (30, 32, 34, 36, 38, 40, 42, 44) also provide redundancy
in the event of failure of a sub bit (30, 32, 34, 36, 38, 40, 42, 44). The
MRAM can be designed to function with one or more sub bits (30, 32, 34, 36,
38, 40, 42, 44) being defective.
