A light emitting device is constructed on a substrate. The device includes an
n-type
semiconductor layer in contact with the substrate, an active layer for generating
light, the active layer being in electrical contact with the n-type semiconductor
layer. A p-type semiconductor layer is in electrical contact with the active layer,
and a p-electrode is in electrical contact with the p-type semiconductor layer.
The p-electrode includes a layer of silver in contact with the p-type semiconductor
layer. A bonding layer is formed overlying the silver layer to make an electrical
connection to the silver layer. The silver layer may be thin and transparent or
thicker (greater than 20 nm) and reflective.
