Ultra-high-density data-storage media employing indium chalcogenide,
gallium chalcogenide, and indium-gallium chalcogenide films to form bit-storage
regions that act as photoconductive, photovoltaic, or photoluminescent semiconductor
devices that produce electrical signals when exposed to electromagnetic radiation,
or to form bit-storage regions that act as cathodoconductive, cathodovoltaic, or
cathodoluminescent semiconductor devices that produce electrical signals when exposed
to electron beams. Two values of a bit are represented by two solid phases of the
data-storage medium, a crystalline phase and an amorphous phase, with transition
between the two phases effected by heating the bit storage region.
